CDM4-650 and CDM7-650 4A and 7A, 650V N-Channel, Medium Power MOSFETs in the DPAK package0 pages
PRODUCT BRIEF
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CDM4-650 (4.0A, N-Channel)
CDM7-650 (7-OA, N-Channel)
650V Medium Power MOSFETs in the DPAK package
entral
iemiconductor Corp.
DPAK .^1^^
Central Semiconductor's CDM4-650 (4A, 650V, N-Channel) and
CDM7-650 (7A, 650V, N-Channel) are medium power MOSFETs
designed for high voltage, fast switching applications such as
Power Factor Correction (PFC), lighting and power inverters. These
MOSFETs combine high voltage capability with low ros(ON). 'ow
threshold voltage, and low gate charge for optimal energy efficiency.
Features:
• High voltage capability
• Low gate charge
• Low r
DS(ON)
Applications:
• Power Factor Correction (PFC)
• Solid state lighting
• Alternative energy inverters
Benefits:
• Energy efficiency
• High power density
• Industry standard DPAK package
Samples
To order samples of this device visit:
www.centralsemi.com/info/CDM
Typical Electrical Characteristics
CDM4-650 Typical Output Characteristics
0 2 4 6 8 10 12 14 16 18 20
VQS, Drain-Source Voltage (Volts)
CDM7-650 Typical Output Characteristics
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2 4 6 8 10 12 14 16 18 20
VDS, Drain-Source Voltage (Volts)
Weblink:
Use QR reader
for direct link to
product web page,
or use: www.centralsemi.com/CDM Series
Maximum Ratings (T^ = 25"C unless otherwise noted)
Electrical Characteristics: (T^ = 25"C unless otherwise noted)
Type No. | 'D (A) MAX | PD (W) MAX | TJ> Tstg CC) MAX | 0JA (-c/w) MAX | BVDSS (V) MIN | r MIN | 5(th) MAX | rDS (£5) TYP | ON) (£2) MAX | @vGS (V) | (A) | Qgs (nC) TYP | ciss (PF) TYP | crss (PF) TYP |
CDM4-650 | 4.0 | 1.13 | -55 to +150 | 110 | 650 | 2.0 | 4.0 | 2.44 | 2.7 | 10 | 2.0 | 3.0 | 463 | 1.0 |
CDM7-650 | 7.0 | 1.13 | -55 to +150 | 110 | 650 | 2.0 | 4.0 | 1.35 | 1.5 | 10 | 3.5 | 5.0 | 754 | 0.8 |
145 Adams Avenue • Hauppauge • New York • 11788 * USA* www.centralsemi.com
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