عضویت 
ورود اعضا
راهنمای خرید
CMPDM203NH (20V, 3.2A N-Channel)0 pages
PRODUCT BRIEF
CMPDM203NH
20V, 3.2A N-Channel MOSFET
in the SOT-23F package
entr*
conductor Corp.
SOT-23F
The Central Semiconductor CMPDM203NH is an N-Channel
Enhancement-mode MOSFET that optimizes high current
capability and energy efficiency in the industry standard
SOT-23F package. The combination of high current, low gate
charge and low on-resistance makes this device the ideal
selection for energy sensitive applications that require higher
drain currents.
Features:
• Low rDS(ON) = 0.033Q @ VGS = 4.5V
• High current lD = 3.2A
• Low gate charge QgS = 0.8nC
Applications:
• Load/Power switches
• Power supply converter circuits
• Battery powered portable equipment
• Motor control
Benefits:
• Energy efficiency
• 9% lower package profile than the SOT-23
• Fast switching speed ton = 6.0ns
Samples and Literature
To order samples of this device visit:
www.centralsemi.com/info/CMPDM203NH
Typical Electrical Characteristics
CMPDM203NH Typical Output Characteristics
0 200 400 600 800 1000
VQS, Drain-Source Voltage (mV)
CMPDM203NH Typical Drain Source On Resistance
at G
3 E
o
in
a .2
z a
to SS
TA.25"C | ||
Pulse | dTest | |
- | - VGS | :2.5V |
- - | vGS=< | .5V |
- - | ||
4 6 8 10
IQ, Drain Current (A)
New
SMD
SELECTION
GUIDE
Order your selection guide today.
Visit: web.centralsemi.com/search/sample.php
Electrical Characteristics
BVDSS (V) MIN | ■D (A) MAX | (\ MIN | (th) MAX | rDS(ON) (O) TYP | (") MAX | @vGS (V) | (A) | Q (n TYP | gs C) MAX | ''iss (PF) TYP | ''rss (PF) TYP | PD (mW) MAX | TJ> Tstg CC) MAX | 0JA (-c/w) MAX |
20 | 3.2 | 0.6 | 1.2 | 0.033 0.046 | 0.05 0.07 | 4.5 2.5 | 1.6 1.6 | 0.8 | 1.2 | 395 | 44 | 350 | -55 to+150 | 357 |
mal Characteristics
145 Adams Avenue • Hauppauge • New York • 11788 * USA* www.centralsemi.com
"
