Si5904DC MOSFETS0 pages
Si5904DC
Vishay Siliconix
Dual N-Channel 2.5 V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.075 at VGS = 4.5 V
± 4.2
0.134 at VGS = 2.5 V
20
ID (A)
± 3.1
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET: 2.5 V Rated
• Compliant to RoHS Directive 2002/95/EC
1206-8 ChipFET ®
1
D1
S1
D1
D2
G1
D1
S2
D2
G2
Marking Code
G1
CB XX
D2
G2
Lot Traceability
and Date Code
Part # Code
Bottom View
S1
S2
N-Channel MOSFET
Ordering Information: Si5904DC-T1-E3 (Lead (Pb)-free)
Si5904DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 85 °C
Continuous Source Current (Diode Conduction)a
IS
TA = 25 °C
Maximum Power Dissipationa
TA = 85 °C
PD
± 3.1
± 3.0
± 2.2
± 10
1.8
2.1
1.1
1.1
0.6
A
0.9
TJ, Tstg
Operating Junction and Storage Temperature Range
V
± 4.2
IDM
Pulsed Drain Current
Soldering Recommendations (Peak
ID
Unit
- 55 to 150
Temperature)b, c
W
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t≤5s
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
50
60
90
110
30
Unit
40
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See reliability manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71065
S10-0548-Rev. D, 08-Mar-10
www.vishay.com
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