CWDM3011N (Single, N-Channel)0 pages

PRODUCT BRIEF

CWDM3011N (Single, N-Channel)

CWDM3011P (Single, P-Channel)

30V, 11A, MOSFETs in the SOIC-8 package

SOIC-8

entr*

conductor Corp.

Central Semiconductor's CWDM3011N and CWDM3011P are high

current enhancement-mode silicon MOSFETs designed for high

speed pulsed amplifier and driver applications. These MOSFETs

offer high current, low rpsfON). low threshold voltage, and low

gate charge.

Features:

• Low rDS(ON)

• High current

• Low threshold voltage

• Low gate charge

Applications:

• Load/Power switches

• Power supply converter circuits

• Battery powered portable equipment

Benefits:

• Energy efficiency

• High power density

• Industry standard package

Samples and Literature:

To request samples visit:

www.centralsemi.com/info/CWDM3011

Order your selection guide today.

Visit: web.centralsemi.com/search/sample.php

Typical Electrical Characteristics

N-Channel Typical Output Characteristics

a.

E

<

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

Vpg, Drain Source Voltage (Volts)

P-Channel Typical Output Characteristics

«T 25

a.

E

i 20

c

a

2 10

a

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

VQS, Drain Source Voltage (Volts)

Weblink:

Use QR reader

for direct link to

product web page,

or use: www.centralsemi.com/CWDM3011

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Maximum Ratings (T^ = 25"C unless otherwise noted)

Electrical Characteristics: (T^ = 25"C unless otherwise noted)

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145 Adams Avenue • Hauppauge • New York • 11788 * USA* www.centralsemi.com