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CMRDM3590 (20V, 160mA N-Channel)0 pages
Product Brief
CMRDM3590 (20V, 160mA N-Channel)
CMRDM7590 (20V, 140mA P-Channel)
CMRDM3575 (20V, N-Channel & P-Channel)
Dual, MOSFETs in the SOT-963 package
SOT-963
Typical Electrical Characteristics
Central Semiconductor’s CMRDM3590 (N-Channel), CMRDM7590
(P-Channel) and CMRDM3575 (N-Channel and P-Channel) are
dual, enhancement-mode MOSFETs designed for applications
including high speed pulsed amplifiers and drivers. These MOSFETs
have beneficially low rDS(ON), low threshold voltage, and very low
gate charge characteristics.
Features:
•
•
•
•
ESD protection up to 2kV
Low rDS(ON)
Low threshold voltage
Low gate charge
Applications:
• Load/Power switches
• Boost/Buck converters
• Battery charging/Power management
Samples:
Benefits:
• Low profile
• Space saving
• Energy efficiency
Literature:
To request samples visit:
www.centralsemi.com/info/CMRDM
New
SMD
SELECTION
GUIDE
Weblink:
Use QR reader
for direct link to
product web page,
or use: www.centralsemi.com/info/CMRDM
Order your selection guide today.
Visit: web.centralsemi.com/search/sample.php
Maximum Ratings (TA = 25˚C unless otherwise noted)
Electrical Characteristics: (TA = 25˚C unless otherwise noted)
ΘJA
BVDSS
(mW)
TJ, Tstg
(˚C)
(˚C/W)
(V)
MAX
MAX
MAX
MAX
MIN
MIN
MAX
TYP
MAX
20
160
125
-65 to +150
1000
20
0.4
1.0
1.5
2.0
3.0
4.0
3.0
4.0
6.0
10
4.5
2.5
1.8
1.5
20
140
125
-65 to +150
1000
20
0.4
1.0
4.0
5.5
8.0
11
5.0
7.0
10
17
4.5
2.5
1.8
1.5
VDS
(V)
ID
(mA)
MAX
N-Channel
P-Channel
PD
145 Adams Avenue
•
Hauppauge
•
VGS(th)
(V)
New York
•
11788
rDS(ON)
(Ω)
(Ω)
•
USA
•
@ VGS
(V)
Qgs
(nC)
Ciss
(pF)
(pF)
TYP
TYP
TYP
100
50
20
10
0.176
9.0
2.2
100
50
20
10
0.17
10
4.0
@ ID
(mA)
www.centralsemi.com
Crss
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