Diodes (PIN)0 pages

Applications
• Designed for
switching applications

Features
• Low capacitance
• Low resistance
• Fast switching
• Oxide-nitride
passivated
• Durable construction
• High voltage

PIN Beam-Lead Diodes
Skyworks series of silicon PIN beam-lead diodes offer excellent performance in high
frequency hybrid circuit switches. These devices are configured as mesa (DSM8100-000)
or planar diodes (DSG9500-000), both of which have extremely low junction capacitance,
25 pF maximum, which enables these devices to be used has high-isolation series
elements in high frequency switches. Both devices offer very fast switching time and low
insertion loss.
Skyworks broad product portfolio includes PIN diodes as beam-leads, in addition to
packaged and bondable silicon chips, and plastic packaged surface mount devices for
switch and attenuator applications.

Applications
PIN diodes are three layer diodes, comprised of a heavily doped anode (the “P” layer) and
a heavily doped cathode (the “N” layer) separated by a virtually undoped intrinsic layer
(the “I” layer). Under forward bias, charge carriers from the P and the N layers are forced
into the I layer, which reduces its RF impedance. When a reverse bias voltage is applied
across the PIN diodes, all free charge carriers are removed from the I layer, thereby causing
its RF impedance to increase. This variable RF impedance versus DC or low frequency bias
signal allows the diode to be used in RF switching circuits in which the PIN diode is either
forward biased or reverse biased.
Skyworks Green™ products are RoHS (Restriction of Hazardous Substances)compliant, conform to the EIA/EICTA/JEITA Joint Industry Guide (JIG) Level A
guidelines, are halogen free according to IEC-61249-2-21, and contain <1,000
ppm antimony trioxide in polymeric materials.

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