CS-1701 Anisotropic RIE Plasma System0 pages

CS 1701 R.I.E.

Plasma Cleaning System

A NORDSON COMPANY

Advanced Performance and Value

The March CS 1701 Reactive Ion Etching systemdelivers performance often associated with high-
investment etching tools. The system is excellent for
metal etching, silicide etching and etching of III-V
compounds, anisotropic etching of nitrides, oxides and
polyimides.Key performance features of the CS 1701 systeminclude the large DC bias and the ability to control
process pressure independent of gas flow. The system
allows users a wide variety of etch profiles ranging from
anisotropic requiring high aspect ratios to sloped walls. >

Etch Rates & Uniformity

The plasma chamber features a ceramic ring on the
bottom electrode that focuses the plasma. This unique
design, combined with the solid state 600-watt RF
generator, provides maximum power utilization in the
chamber and delivers excellent uniformity and etch
rates.Representative etch rates achievable with the CS 1701system are:Al:1 micron/minGaAs:1 micron/min
TiW:5,000 ΅/min
SiO >

Microprocessor Control

The CS 1701 systems integrated microprocessor
control system provides users with flexibility and ease of
use. An important feature of the control system is the
ability to link consecutive process steps. Up to nine
process steps can be stored and recalled. Linking steps
ensures the sample remains under vacuum pressure,
and reduces the possibility of contamination caused by
returning the system to atmospheric pressure. >
2 :3,000 - 7,000 ҅/minEtching selectivity is optimized by the precise mixing ofgases. Two electronic mass flow controllers provide
precise and reproducible gas flow. Up to four additional
mass flow controllers can be added for system expan-
sion. >

Maximum Control of Process Conditions Temperature Control

Controlling process pressure is a critical parameter in
obtaining the desired etch profiles. The CS 1701 system
provides for chamber pressure control independent of
process gas flow. The systems control system permits
the user to easily program the pressure settings, gasflow ratios, process time, and temperature. The CS
1701 system delivers high quality and reproducible
results. Temperature control is an important factor in optimizing
the etching process. Careful control of the temperature
conditions in the plasma chamber assists in repeatable
results and enhances the etching uniformity. >