IMP Series End Point Detectors0 pages

Hiden IMP Probe - Technical Specification and Materials Guide
Materials Guide
The interfaces listed below are examples of those that can be clearly identified using the Hiden IMP end point
detector.
INTERFACE

GaAs etching with Ni mask. Signal identifies Ni mask exhaustion.

Si/Ga

Identification of SiO2 interface on III-V semiconductor.

Au/Cr/Al

Au/Cr track identification on aluminium substrates.

Au/Ti/Ga

Precise definition of Au/Ti electrical contacts in GaAs.

Mo/Ge

Precise definition of Mo/Ge interfaces in multifilm Mo/Ge structures.

Al/In

Identification of the interface between two semiconductors AlInAs/InP.

Ga/In

Identification between Ternary (GaInAs), Binary (InP) and Quaternary (GaInAsP) structure
by magnitude of the Ga signal.

Ga/In

Detection of individual wells from multiquatenary well structure in
InP/30 x (GaInAs/InP) InP.

Instrument
HAL IMP/301/3F/PIC/A
HAL IMP/301/3F/PIC/B

Mass Range
300
300

Detector
Ion Acceptance Angle
Pulse Counting
Axial
Pulse Counting
30˚

Product Code
413020
413021

APPLICATION EXAMPLE

Ga/Ni

HIDEN IMP SERIES PRODUCT RANGE

Definition of the interface between two layers of AlGaAs separated by a 79 Å GaAs well.

Y/Pr

Identification of the interface between two high temperature superconductor materials
YBa2Cu2O and PrBa2Cu3O7.

Y/Ba/Cu/Mg

Identification of separate layers in multilayer high temperature superconductor materials.

NiCr/Cu/NiFe/SiO2

Magnetic disc sensor head manufacture.

Elements identified in the above applications include:
Gallium, Titanium, Silicon, Gold, Chromium, Aluminium, Indium, Molybdenum, Germanium, Yttrium,
Praseodymium, Barium, Copper, Nickel, Iron, Platinum.

Technical Specification

Dynamic Range:
Sensitivity:

Bake-out Temperature:
Maximum
Operating Pressure:

Mounting Flange:
Minimum Port Size:

Product Code
202400
303702
303712
303721
303805

Ion Milling Probes for
Precise Control in Thin Film
Etching Applications

3050110
201400

OTHER HIDEN PRODUCTS FOR PROCESS CONTROL IN SEMICONDUCTOR
AND THIN FILM APPLICATIONS
Complementing the Hiden IMP Series of end point detectors, Hiden manufacture a complete range of dedicated
residual gas analysers and in-situ process gas monitors for total control in PVD, CVD and MBE applications.

• HAL RC-RGA Series
Residual Gas Analysers for Precision Analysis in Vacuum Diagnostics
Fast, precise and easy to use quadrupole mass spectrometers for vacuum diagnostics,
base pressure fingerprinting and leak detection.

Vacuum System
300.
Triple filter assembly.
0 to 100 eV.
Twin filament, radially
symmetric, electron impact.
Pulse Ion Counting
Channeltron.
7 decades.
A primary argon ion beam of
2.5 kV, 0.5mA/cm-2 onto an
aluminium target will yield
current at m/e 27 of >106
counts/sec. with probe to
target distance of 75 mm.
250˚C.
5 x 10-6 Torr without
differential pumping. 10-3
Torr with differential
pumping.
DN-63-CF.
60 mm.

Pumping:
Gauges:

UHV vacuum manifold with
60 l/s turbomolecular pump set.
UHV Penning with controller
including pressure sensing
set-point and relay output for
fail-safe operation.

System Control
Operating System:

Windows 3.x / Windows 95 /
Windows NT.
Communication:
RS232, RS422, RS485, Ethernet
LAN.
Inputs/Outputs:
Two 16 bit analog inputs as
standard, eight channel input
module optional.
One 0 to ±10 Volt analogue
output as standard, up to sixteen
12 bit outputs optional.
Five logic level I/O channels plus
two relay outputs included as
standard.
Alarms:
Extensive alarm options
including high-to-low/low-to-high
status indication with message
send capability.
Vacuum Protection: Overpressure monitor for
filament protection in RGA mode.
External trip input from external
pressure gauge for End Point
Monitoring.

High Performance Process Control Gas Analysers
Direct analysis of production processes in wafer fabrication for real time quality control.
Featuring on-line statistics and control chart graphing.

HIDEN PRODUCTS FOR PLASMA MONITORING
• Hiden EQP
Plasma Sampling System
High sensitivity mass and energy analyser for precise monitoring of ions, neutrals and
radicals in plasma processes.

Mg

• Hiden ESP

INTENSITY

Detector:

Component
UHV vacuum manifold for differential pumping and probe positioning.
60 l/s UHV turbomolecular pump set for routine processes.
240 l/s UHV turbomolecular pump set for high pressure processes.
Reactive gas pumping set.
Penning gauge with relay output for interlock protection of the IMP Probe.
Pneumatically actuated gate valve for automatic isolation of IMP Probe pumping system
during process chamber venting.
Spare twin thoriated iridium filament pair.

• HPR-30 Series

Ion Milling Probe
Mass Range :
Mass Filter :
Energy Filter:
Ion Source:

Extended ion optics configurations for large process chambers.

VACUUM SYSTEM SPARES AND ACCESSORIES

Al/Ga

Hiden IMP Series
End Point Detectors

State-Of-The-Art Electrostatic Langmuir Probe
Routine analysis of the primary plasma electrical properties including plasma potential,
floating potential, electron temperature, electron density, ion density, electron energy
distribution and Debye length.

Cu
Ba
Y
0

1000

2000

TIME (s)

Manufactured in England by:

HIDEN ANALYTICAL LTD
420 EUROPA BOULEVARD
WARRINGTON
WA5 7UN ENGLAND
Te l: +44 (0) 1925 445225
Fax: +44 (0) 1925 416518
E-Mail: info@hiden.co.uk
Web site: www.HidenAnalytical.com
Certificate No. 6738
It is Hiden Analytical’s policy to continually improve product performance and therefore specifications are subject to change.
TECHNICAL DATA SHEET 147

Printed in England

3000