808nm, Conduction-Cooled, QCW, Vertical Diode Laser Stack0 pages

808nm, Conduction-Cooled, QCW, Vertical

Diode Laser Stack

DILAS

The diode laser company.

Features

- Compact and planar design

- Center hole for module alignment

- High environmental temperature range

- High output power bar

Device Specification

Optical Parameters1 Units

Center Wavelength Range3 nm 808

Center Wavelength Tolerance nm ±3

Output Power per Bar2'5 W 250

Number of Bars3 # up to 8

Bar-to-Bar Spacing3 mm 1.7

Spectral Width (FWHM)5 nm <5

Slope Efficiency per Bar W/A >1.25

Fast-Axis Divergence without Optics degree 70

Fast-Axis Divergence with Fast-Axis Collimation mrad <8

Slow-Axis Divergence degree <10

Wavelength Temp. Coefficient nm/°C 0.27

Electrical Parameters1

Power Conversion Efficiency % >55

Threshold Current (ITH) A <26

Operating Current (I0p) A <250

Operating Voltage per Bar (V0p) V <2

High Duty Cycle % 2

Thermal Parameters

Operating Temperature Range3'4 °C +20 to +35

Storage Temperature Range4 °C 0 to +55

Recommended Heatsink Capacity per Bar W >20

^ata at 20°C cold water temperature.

2Reduced lifetime if used above nominal operating conditions.

3Custom configurations on request.

4A non-condensing environment is required for storage and operation below the ambient dew point.

5QCW, <2% duty cycle, <500usec at 808nm, <2m sec at 940nm, 2% duty cycle, <200usec at 1940nm.