MDL-III-830L Infrared diode laser at 830nm from CNI0 pages

MDL-III-830L/1~120mW

SPECIFICATIONS
Wavelength (nm)

INFRARED DIODE LASER AT
830nm

830±10

Output power (mW)

>1, 5, 10,…, 120
<0.5

Transverse mode

Near TEM00

Operating mode

Infrared diode laser at 830nm is made
features of round spot, long lifetime, low cost
and easy operating, which is widely used in
measurement, spectrum analysis, etc.

Spectral line width (nm)

CW

Power stability (rms, over 4 hours)

<1%, <3%, <5%

Warm-up time (minutes)

<5

Beam divergence, full angle (mrad)

<1.0

Dimensions of beam at the aperture (mm)

~3. 0

Beam height from base plate (mm)

24.8

Operating temperature (℃)

10~35

Power supply (90-264VAC)

PSU-III-LED

Modulation option
Expected lifetime (hours)

139(L)×73(W) ×46. 2(H) mm3, 0.6kg

PSU-III-FDA

PSU-III-OEM

10000

Warranty

MxL-III-830

TTL/Analog

1 year

1Hz-5KHz, 1Hz-10KHz, 1Hz-30KHz, and TTL on/off

PSU-III-LED

PSU-III-FDA

PSU-III-OEM

154 (L) ×155(W) ×95 (H) mm3, 1.5kg

133 (L) ×130(W) ×65 (H) mm3, 1.2kg

100 (L) ×62(W) ×56 (H) mm3, 0.2kg

Website: http://www.cnilaser.com

E-mail: sales@cnilaser.com

Tel: +86-431-85603799

Fax: +86-431-87020258