Sputtering targets for high quality CIGS CuGa, CuIn, CuInGa0 pages
Sputtering targets for high quality CIGS
CuGa, CuIn, CuInGa
Sputtering of the absorber precursor layer of CIGS thin film solar cells offers advantages in terms of homogeneity, process
stability and material utilization. CuGa, CuIn and CuInGa sputtering targets are available in various compositions. An optimal
sputtering behavior is achieved by a homogenous and fine-grained microstructure.
Composition flexibility
We provide sputtering targets accor-
CuIn
CuGa
CuInGa
ding to your specific CIGS process.
A great variety of CuGa, CuIn and
Cu: 70 - 90 %
In: 10 - 30 %
CuInGa target composition is possible
Cu: 60 - 90 %
Ga: 10 - 40 %
through PLANSEE’s powder-metallurgical manufacturing process.
Cu: > 30 %
In: > 60 %
Ga: < 30 %
Ga-content: ±1 wt.% / In-content: ±1 wt.%
Physical Data (Cu75Ga25 wt.%) at 25 °C
Density
Grain size
Electrical conductivity
8.65 (> 99 %) g/cm³
< 100 µm
> 7.0 MS/m
Hardness
Thermal conductivity
Thermal expansion
200 - 230 HV10
> 45 W/m·K
~ 23 · 10-6 1/K