MBN1200E17D0 pages

IGBT MODULE

Spec.No.IGBT-SP-03007 R8

MBN1200E17D
Silicon N-channel IGBT
FEATURES
High speed, low loss IGBT module.
Low driving power due to low input
capacitance MOS gate.
Low noise due to ultra soft fast recovery diode.
High reliability, high durability module.
High thermal fatigue durability.
(delta Tc=70C, N30,000cycles)
Isolated heat sink (terminal to base).
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ABSOLUTE MAXIMUM RATINGS (Tc=25 C )
Item

Symbol

Collector Emitter Voltage
Gate Emitter Voltage

VCES
VGES
DC
IC
Collector Current
1ms
ICp
DC
IF
Forward Current
1ms
IFM
Junction Temperature
Tj
Storage Temperature
Tstg
Isolation Voltage
VISO
Terminals (M4/M8)
Screw Torque
Mounting (M6)
Notes: (1) Recommended Value 1.80.2/91N·m

Unit

MBN1200E17D

V
V

1,700
20
1,200
A
2,400
1,200
A
2,400
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C
-40 ~ +125
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C
-40 ~ +125
VRMS
4,000(AC 1 minute)
2/10
(1)
N·m
6
(2)
(2) Recommended Value 5.50.5N·m

ELECTRICAL CHARACTERISTICS
Item

Symbol

Unit

Min.

Typ.

Max.

Test Conditions
o

10 VCE=1,700V, VGE=0V, Tj=25 C
Collector Emitter Cut-Off Current
I CES
mA
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10
35 VCE=1,700V, VGE=0V, Tj=125 C
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Gate Emitter Leakage Current
IGES
nA
-500
+500 VGE=20V, VCE=0V, Tj=25 C
o
Collector Emitter Saturation Voltage
VCE(sat)
V
2.0
2.7
3.3 IC=1,200A, VGE=15V, Tj=125 C
o
Gate Emitter Threshold Voltage
VGE(TO)
V
5.0
6.5
8.0 VCE=10V, IC=120mA, Tj=25 C
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Input Capacitance
Cies
nF
100
VCE=10V, VGE=0V, f=100kHz, Tj=25 C
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Internal Gate Resistance
Rge
Ω
0.8
VCE=10V, VGE=0V, f=100kHz, Tj=25 C
Rise Time
tr
0.6
1.0 VCC=900V, Ic=1,200A
Turn On Time
ton
0.9
1.8 L=65nH,CGE=120nF (3)
Switching Times
s
Fall Time
tf
0.3
0.7 RG=1.5 (3)
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Turn Off Time
toff
1.4
3.4 VGE=15V, Tj=125 C
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Peak Forward Voltage Drop
VFM
V
1.3
1.9
2.5 IF=1,200A, VGE=0V, Tj=125 C
Reverse Recovery Time
trr
s
0.5
1.0 VCC=900V, Ic=IF=1,200A
Turn On Loss
Eon(10%)
J/P
0.09
0.25
0.4 L=65nH,CGE=120nF (3)
Turn Off Loss
Eoff(10%)
J/P
0.18
0.35
0.5 RG=1.5 (3)
o
Reverse Recovery Loss
Err(10%)
J/P
0.18
0.4
0.6 VGE=15V, Tj=125 C
Stray inductance module
LSCE
nH
18
IGBT
Rth(j-c)
0.018
Thermal Impedance
K/W
Junction to case
FWD
Rth(j-c)
0.030
Contact Thermal Impedance
Rth(c-f)
K/W
0.008
Case to fin
Notes:(3) RG and CGE value is the test condition’s value for evaluation of the switching times, not recommended value.
Please, determine the suitable RG and CGE value after the measurement of switching waveforms
(overshoot voltage, etc.) with appliance mounted.
* Please contact our representatives at order.
* For improvement, specifications are subject to change without notice.
* For actual application, please confirm this spec sheet is the newest revision.

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