BLA0912-250 Avionics LDMOS transistor0 pages

BLA0912-250
Avionics LDMOS transistor
Rev. 3 — 26 November 2010
Product data sheet
1. Product profile
1.1 General description
Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead
SOT502A flange package with a ceramic cap. The common source is connected to the
mounting flange.
Table 1.
Test information
Typical RF performance measured in common source class-AB test circuit at PL = 250 W and 960 MHz to 1215 MHz
frequency band. Th = 25 °C; Zth(j-h) = 0.15 K/W; unless otherwise specified.
f
tp
δ
VDS PL
(MHz)
(μs)
%
(V)
(W) (dB) (dB) (%) (dB)
(ns) (ns) (K/W)
(deg)
all modes
960 to 1215
100
10
36
250 13.5 0.8
50
0.1
25
6
0.18
±5
TCAS
1030 to 1090
32
0.1 36
250 14.0 0.8
50
0
25
6
0.07
±5
Mode-S
1030 to 1090
128
2
250 13.5 0.8
50
0.1
25
6
0.15
±5
1030 to 1090
340
1
JTIDS
960 to 1215
3300 22
Mode of operation
36
Gp
ΔGp
ηD
Pdroop(pulse)
tr
tf
Zth(j-h) ϕins(rel)
36
250 13.5 0.8
50
0.2
25
6
0.20
±5
36
200 13.0 1.2
45
0.2
25
6
0.45
±5
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
High power gain
Easy power control
Excellent ruggedness
Source on mounting base eliminates DC isolators, reducing common mode
inductance.
1.3 Applications
Avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such
as Mode-S, TCAS and JTIDS, DME or TACAN.