C-Band Microwave Products 0 pages

Product Brief
C-Band Microwave Products
Highlights
• Implemented in Toshiba’s
Heterojunction Field
Effect Transistors (HFET)
process technology, ideal
for high power microwave
devices
• Employs Toshiba’s cutting
edge ion implantation
technology to enable
development of highest
output FETs
• Devices available in
versions from 4-watts to
80-watts, featuring power
output from 36.5 dBm to
49 dBm relative to
1 milliwatt (dBm) at
frequency ranges of 3.3
GHz to 8.5 gigahertz
(GHz)
• Gain ranges from
12.5 dB (typ.) for the
TIM3438-12UL and -16SL
to 6.0dB for the TIM7785-
30SL, -35SL, -45SL and -
60SL; drain current
ranges 1.1A (typ.) to
13.2A (typ.)
Technology
Toshiba Corp. (Toshiba)* is a leading
supplier of high performance microwave
devices based on a gallium arsenide
(GaAs) semiconductor technology. Stateof-
the-art technologies employed in the
manufacturing process include e-beam
deep submicron pattering, high energy ion
implantation, and plated heat sinks.
Through innovation and continuous
improvement in circuit design, wafer
fabrication, packaging and assembly.
Toshiba America Electronic Components,
Inc. (TAEC)**, sales and marketing
representative in the Americas, delivers
products with the high quality, reliability
and performance available to satisfy your
most demanding design.
C-Band Microwave Products
1
Products
Toshiba has a broad product line of power
gallium arsenide field effect transistor (GaAs
FETs) within the C, X and Ku frequency
bands. These products address the high
power infrastructure markets of wireless
communications as well as both the
subscriber and infrastructure segments of
broadband fixed wireless access. Specific
supported applications include wireless local
area network (WLAN), multichannel
multipoint distribution system (MMDS), fixed
wireless access (FWA), terrestrial radio, very
small aperture terminal (VSAT), satellite
earth station and radar.
www.Toshiba.com/taec
POUT vs. Frequency Map
50
48
46
44
42
40
38
36
34
32
30
100
10
1.0
5.0 5.5 6.0 6.5 7.0 7.5 8.0
Frequency — GHz
Output Power at 1 dB Gain
Compression — dBm
Output Power at 1 dB Gain
Compression — W
TIM5359-80SL TIM6472-60SL TIM7785-60SL
TIM6472-60SL TIM7785-60SL TIM5359-80SL
Frequency 6.4–7.2 GHz 7.7–8.5 GHz 5.3–5.9 GHz
P1 dB (typ.) 48.0 dBm 48.0 dBm 49.0 dBm
G1 dB (typ.) 7.5 dB 6.0 dB 7.5 dB
IDS (typ.) 13.2A 13.2A 18.0A
IM3 (min.) –42 dBc (min.) –42 dBc (min.) –25 dBC (min.)
(S.C.L. @ 36.5 dBm) (S.C.L. @ 36.5 dBm) (S.C.L. @42.0 dBm)