Modules - Modules, IGBT - DC Collector Current 100 A and above0 pages

Document Number: 94362 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 03-May-10 1
"Half-Bridge" IGBT INT-A-PAK
(Standard Speed IGBT), 200 A
GA200HS60S1PbF
Vishay High Power Products
FEATURES
• Generation 4 IGBT technology
• Standard: Optimized for hard switching speed
DC to 1 kHz
• Very low conduction losses
• Industry standard package
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized as output inverter stage for TIG
welding machines
PRODUCT SUMMARY
VCES 600 V
IC DC 480 A
VCE(on) at 200 A, 25 °C 1.13 V
INT-A-PAK
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage VCES 600 V
Continuous collector current IC
TC = 25 °C 480
A
TC = 116 °C 200
Pulsed collector current ICM 800
Peak switching current ILM 800
Gate to emitter voltage VGE ± 20
V
RMS isolation voltage VISOL Any terminal to case, t = 1 minute 2500
Maximum power dissipation PD
TC = 25 °C 830
W
TC = 85 °C 430
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage VBR(CES) VGE = 0 V, IC = 1 mA 600 - -
Collector to emitter voltage VCE(on) V
VGE = 15 V, IC = 200 A - 1.13 1.21
VGE = 15 V, IC = 200 A, TJ = 125 °C - 1.08 1.18
Gate threshold voltage VGE(th) IC = 0.25 mA 3 4.5 6
Collector to emitter leakage current ICES
VGE = 0 V, VCE = 600 V - 0.025 1
mA
VGE = 0 V, VCE = 600 V, TJ = 125 °C - - 10
Gate to emitter leakage current IGES VGE = ± 20 V - - ± 250 nA