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ES1DL0 pages
ES1AL thru ES1JL
Taiwan Semiconductor
CREAT BY ART
Surface Mount Super Fast Rectifiers
FEATURES
- Glass passivated junction chip
- Ideal for automated placement
- Low profile package
- Low power loss, high efficiency
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: Sub SMA
Sub SMA
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: Indicated by cathode band
Weight: 0.019 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
Marking code
ES
ES
ES
ES
ES
ES
ES
ES
1AL
1BL
1CL
1DL
1FL
1GL
1HL
1JL
EAL
SYMBOL
EBL
ECL
EDL
EFL
EGL
EHL
EJL
UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
150
200
300
400
500
600
V
Maximum RMS voltage
VRMS
35
70
105
140
210
280
350
420
V
Maximum DC blocking voltage
VDC
50
100
150
200
300
400
500
600
V
Maximum average forward rectified current
IF(AV)
1
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
A
Maximum instantaneous forward voltage (Note 1)
@1A
VF
Maximum reverse current @ rated VR TJ=25 ℃
TJ=125 ℃
IR
Typical junction capacitance (Note 2)
Cj
Maximum reverse recovery time (Note 3)
Trr
35
Typical thermal resistance
RθJL
RθJA
35
85
TJ
- 55 to +150
O
C
- 55 to +150
O
C
Operating junction temperature range
Storage temperature range
TSTG
0.95
1.3
1.7
V
5
μA
100
10
8
pF
ns
O
C/W
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Measured at 1 MHz and Applied VR=4.0 Volts.
Note 3: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Document Number: DS_D1405035
Version: I14
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