RJP65S07DWT/RJP65S07DWA Data Sheet (650V - 150A - IGBT / Application: Inverter)0 pages

Datasheet

RJP65S07DWT / RJP65S07DWA
650V - 150A - IGBT
Application: Inverter

R07DS0824EJ0400
Rev.4.00
Mar 11, 2015

Features
Low collector to emitter saturation voltage
VCE(sat) = 1.5 V typ. (at IC = 150 A, VGE = 15 V, Tc = 25C)
High speed Switching
Short circuit withstands time (10 s min.)

Outline

Die: RJP65S07DWT-80
2
C

Wafer: RJP65S07DWA-80

2

3

3
1G

1
3
E
3

1. Gate
2. Collector (The back)
3. Emitter

3

Absolute Maximum Ratings
(Tc = 25°C unless otherwise noted)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Junction temperature

Symbol
VCES
VGES
IC
IC
Tj

Ratings
650
±30
300
150
175 Note1

Unit
V
V
A
A
C

Notes: 1. Please use this device in the thermal conditions where the junction temperature does not exceed 175C.
IGBT Application Note is disclosed about reliability test and application condition up to Tj = 175C.

R07DS0824EJ0400 Rev.4.00
Mar 11, 2015

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