MAGX-000025-1500000 pages

MAGX-000025-150000
GaN on SiC HEMT Power Transistor
150 W, 1-2500 MHz

Rev. V1

Features

MAGX-000025-150000

GaN on SiC Transistor Technology
Broadband Unmatched Transistor
Common-Source Configuration
+50 V Typical Operation
Class AB Operation
RoHS* Compliant and 260°C Reflow Compatible
MTTF = 600 years (TJ < 200 °C)

Applications
General purpose for pulsed or CW applications

Description
The MAGX-000025-150000 is a gold-metalized
Gallium Nitride (GaN) on Silicon Carbide (SiC) RF
power transistor suitable for a variety of RF power
amplifier applications. Using state of the art wafer
fabrication processes, these high performance
transistors provide high gain, efficiency, bandwidth,
and ruggedness over a wide bandwidth for today’s
demanding application needs. High breakdown
voltages allow for reliable and stable operation under
more extreme mismatch load conditions compared
with older semiconductor technologies.

Ordering Information
Part Number

Description

MAGX-000025-150000

Flanged

MAGX-000025-SB2PPR

1200-1400 MHz
Evaluation Board

MAGX-000025-SB1PPR

2500 MHz
Evaluation Board

Functional Schematic

Pin No.

Function

1

Vgg/RF Input

2

Vdd/RF Output

3

Vgg/RF Input

4

Vdd/RF Output

* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298