FDMC510P 20V P-Channel PowerTrench® MOSFET 0 pages

June 2010
©2010 Fairchild Semiconductor Corporation
FDMC510P Rev.C5
1 www.fairchildsemi.com
FDMC510P P-Channel PowerTrench® MOSFET
FDMC510P
P-Channel PowerTrench® MOSFET
-20 V, -18 A, 8.0 mÙ
Features
..Max rDS(on) = 8.0 mÙ at VGS = -4.5 V, ID = -12 A
..Max rDS(on) = 9.8 mÙ at VGS = -2.5 V, ID = -10 A
..Max rDS(on) = 13 mÙ at VGS = -1.8 V, ID = -9.3 A
..Max rDS(on) = 17 mÙ at VGS = -1.5 V, ID = -8.3 A
..High performance trench technology for extremely low rDS(on)
..High power and current handling capability in a widely used surface mount package
..100% UIL Tested
..Termination is Lead-free and RoHS Compliant
..HBM ESD capability level >2 KV typical (Note 4)
General Description
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been optimized for rDS(ON), switching performance and ruggedness.
Applications
..Battery Management
..Load Switch
Bottom
D
D
D D
S
S S
G
Top
Pin 1
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage -20 V
VGS Gate to Source Voltage ±8 V
ID
Drain Current -Continuous (Package limited) TC = 25 °C -18
A
-Continuous (Silicon limited) TC = 25 °C -54
-Continuous TA = 25 °C (Note 1a) -12
-Pulsed -50
EAS Single Pulse Avalanche Energy 37 mJ
PD
Power Dissipation TC = 25 °C 41
W
Power Dissipation TA = 25 °C (Note 1a) 2.3
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
RèJC Thermal Resistance, Junction to Case 3
°C/W
RèJA Thermal Resistance, Junction to Ambient (Note 1a) 53
Device Marking Device Package Reel Size Tape Width Quantity
FDMC510P FDMC510P MLP 3.3X3.3 13 ’’ 12 mm 3000 units